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GPT13N50DGN220FP

POWER FIELD EFFECT TRANSISTOR

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedtermination schemetoprovideenhancedvoltage-blockingcapability withoutdegradingperformanceovertime.Inaddition,this advancedMOSFETisdesignedtowithstandhighenergyin avalancheandcommutationmodes.Thenewenergy

GREATPOWERGreatpower Microelectronic Corp.

冠順微電子深圳冠順微電子有限公司

HFP13N50

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

華汕電子器件汕頭華汕電子器件有限公司

HFP13N50S

500VN-ChannelMOSFET

FEATURES ?OriginativeNewDesign ?SuperiorAvalancheRuggedTechnology ?RobustGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:38nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):0.39Ω(Typ.)@VGS=10V ?

SEMIHOW

SemiHow Co.,Ltd.

HFP13N50U

SuperiorAvalancheRuggedTechnology

FEATURES ?OriginativeNewDesign ?SuperiorAvalancheRuggedTechnology ?RobustGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:34nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):0.39Ω(Typ.)@vGS=10V ?

SEMIHOW

SemiHow Co.,Ltd.

HFS13N50S

500VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFS13N50U

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HM13N50

siliconN-channelEnhancedVDMOSFETs

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HRH13N50ANB

500VN-ChannelPlanarMOSFET

Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH13N50ANF

500VN-ChannelPlanarMOSFET

Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH13N50ANP

500VN-ChannelPlanarMOSFET

Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

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更多GPT13N50DG供應(yīng)商 更新時(shí)間2025-3-24 11:04:00

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