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TPS7A0231PDQNR

Marking：GJ；Package：X2SON；TPS7A02 Nanopower IQ, 25-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

TITexas Instruments

德州儀器美國德州儀器公司

TPS7A0231PDQNR

Marking：GJ；Package：X2SON；TPS7A02 Nanopower IQ, 25-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

TI1Texas Instruments

德州儀器

824540352

Marking：GJG；WE-TVSP Power TVS Diode

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+150°Cunderworst caseconditions OperatingTemperature-65upto+150°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

824540402

Marking：GJK；WE-TVSP Power TVS Diode

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+150°Cunderworst caseconditions OperatingTemperature-65upto+150°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

824540442

Marking：GJM；WE-TVSP Power TVS Diode

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+150°Cunderworst caseconditions OperatingTemperature-65upto+150°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

AP2125N-1.8TRG1

Marking：GJ2；Package：SOT-23-3；300mA, HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features -ExcellentRippleRejection:70dBTypical(1.8VVersion) -LowDropoutVoltage:65mV(IOUT=100mA,3.3VVersion) -LowStandbyCurrent:0.01μATypical -LowQuiescentCurrent:60μATypical -ExtremelyLowNoise:50μVrmsTypical -MaximumOutputCurrent:300mA(Min.) -HighOutputV

DIODES

Diodes Incorporated

AP2125N-2.5TRG1

Marking：GJ4；Package：SOT-23-3；300mA, HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features -ExcellentRippleRejection:70dBTypical(1.8VVersion) -LowDropoutVoltage:65mV(IOUT=100mA,3.3VVersion) -LowStandbyCurrent:0.01μATypical -LowQuiescentCurrent:60μATypical -ExtremelyLowNoise:50μVrmsTypical -MaximumOutputCurrent:300mA(Min.) -HighOutputV

DIODES

Diodes Incorporated

AP2125N-2.8TRG1

Marking：GJ5；Package：SOT-23-3；300mA, HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features -ExcellentRippleRejection:70dBTypical(1.8VVersion) -LowDropoutVoltage:65mV(IOUT=100mA,3.3VVersion) -LowStandbyCurrent:0.01μATypical -LowQuiescentCurrent:60μATypical -ExtremelyLowNoise:50μVrmsTypical -MaximumOutputCurrent:300mA(Min.) -HighOutputV

DIODES

Diodes Incorporated

AP2125N-3.0TRG1

Marking：GJ6；Package：SOT-23-3；300mA, HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features -ExcellentRippleRejection:70dBTypical(1.8VVersion) -LowDropoutVoltage:65mV(IOUT=100mA,3.3VVersion) -LowStandbyCurrent:0.01μATypical -LowQuiescentCurrent:60μATypical -ExtremelyLowNoise:50μVrmsTypical -MaximumOutputCurrent:300mA(Min.) -HighOutputV

DIODES

Diodes Incorporated

AP2125N-3.3TRG1

Marking：GJ7；Package：SOT-23-3；300mA, HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features -ExcellentRippleRejection:70dBTypical(1.8VVersion) -LowDropoutVoltage:65mV(IOUT=100mA,3.3VVersion) -LowStandbyCurrent:0.01μATypical -LowQuiescentCurrent:60μATypical -ExtremelyLowNoise:50μVrmsTypical -MaximumOutputCurrent:300mA(Min.) -HighOutputV

DIODES

Diodes Incorporated

詳細(xì)參數(shù)

  • 型號：

    GJ

  • 制造商：

    GTM

  • 制造商全稱：

    GTM

  • 功能描述：

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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更多GJ供應(yīng)商 更新時間2025-4-14 16:47:00

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