零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
GFC264 | N Channel Power MOSFET with extremely low RDS(ON) | GSG Gunter Seniconductor GmbH. | GSG | |
GaAsMMICSUB-HARMONICALLYPUMPEDMIXER,20-32GHz | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsMMICSUB-HARMONICALLYPUMPEDMIXER,20-32GHz | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsMMICSUB-HARMONICALLYPUMPEDMIXER,20-32GHz GeneralDescription TheHMC264chipisasub-harmonicallypumped(x2)MMICmixerwithanintegratedLOamplifierwhichcanbeusedasanupconverterordownconverter.ThechiputilizesaGaAsPHEMTtechnologythatresultsinasmalloverallchipareaof1.28mm2.The2LOtoRFisolationisexce | Hittite Hittite Microwave Corporation | Hittite | ||
MicrowavePoint-to-PointRadios | MICROSS Micross Components | MICROSS | ||
GaAsPHEMTMMICMEDIUMPOWERAMPLIFIER,34-42GHz GeneralDescription ThehmC-ABh264isahighdynamicrangeGaAsphemTmmiCmediumpowerAmplifierwhichoperatesbetween34and42Ghz.ThehmC-ABh264provides18.5dBofgain,andanoutputpowerof18dBmat1dBcompressionfroma+5Vsupply.ThehmC-ABh264amplifiercaneasilybeintegratedi | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsPHEMTMMICMEDIUMPOWERAMPLIFIER,34-42GHz | Hittite Hittite Microwave Corporation | Hittite | ||
ACTIVEBIASCONTROLLER GeneralDescription HMC981isanactivebiascontrollerthatautomaticallyadjuststhegatevoltageofanexternalamplifiertoachieveconstantbiascurrent.ItcanbeusedtobiasanyenhancementanddepletiontypeamplifiersoperatinginClass-AregimewithDrainvoltagesfrom4Vto12Vanddr | Hittite Hittite Microwave Corporation | Hittite | ||
GaAsPHEMTMMICMEDIUMPOWERAMPLIFIER GeneralDescription ThehmC-ABh264isahighdynamicrangeGaAsphemTmmiCmediumpowerAmplifierwhichoperatesbetween34and42Ghz.ThehmC-ABh264provides18.5dBofgain,andanoutputpowerof18dBmat1dBcompressionfroma+5Vsupply.ThehmC-ABh264amplifiercaneasilybeintegratedi | ADAnalog Devices 亞德諾亞德諾半導體技術有限公司 | AD | ||
ActiveBiasControllerHighCurrent | ADAnalog Devices 亞德諾亞德諾半導體技術有限公司 | AD | ||
Quad,HighVoltage,AmplifierArray | SUTEX Supertex, Inc | SUTEX | ||
StandardPowerMOSFET-N-ChannelEnhancementMode N-ChannelEnhancementMode StandardPowerMOSFET Features ?Internationalstandardpackage JEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-mode po | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET(Vdss=250V,Rds(on)=0.075ohm,Id=38A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMountingHole ●FastS | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastSw | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET(Vdss=250V,Rds(on)=60mohm,Id=44A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknowfor,providesthedesignerwit | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號:
GFC264
- 制造商:
GSG
- 制造商全稱:
GSG
- 功能描述:
N Channel Power MOSFET with extremely low RDS(ON)
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
52000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
OSRAM |
2019+ |
SMD |
6000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
OSRAM |
ROHS+Original |
原廠原封元件 |
600 |
原裝現(xiàn)貨 庫存特價/長期供應元器件代理經(jīng)銷 |
詢價 | ||
OSRAM |
20000 |
詢價 | |||||
OSRAM/歐司朗 |
23+ |
LED |
15000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
OSRAM |
2010+ |
N/A |
23 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
AMS OSRAM |
3000 |
2023 |
6000 |
全新、原裝 |
詢價 | ||
OSRAM |
2022+2023+ |
n/a |
600 |
全新、原裝 |
詢價 | ||
OSRAM(歐司朗) |
23+ |
SMD3030 |
6000 |
誠信服務,絕對原裝原盤 |
詢價 | ||
OSRAM |
2023 |
NA |
3600 |
原廠代理渠道,正品保障 |
詢價 |
相關規(guī)格書
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