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GSP-730

GSP-7303GHzSPECTRUMANALYZER8:.GRF-1300RFandCOMMUNICATIONTRAINER

GWINSTEKGood Will Instrument Co., Ltd.

固緯電子固緯電子實業(yè)股份有限公司

HAL730

Hall-EffectSensorswithDirectionDetection

MICRONAS

Micronas

HAL730

Hall-EffectSensorswithDirectionDetection

MICRONAS

Micronas

HAL730SF-E

Hall-EffectSensorswithDirectionDetection

MICRONAS

Micronas

HAL730SF-K

Hall-EffectSensorswithDirectionDetection

MICRONAS

Micronas

HFP730

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription thesepowerMOSFETsisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers.AndDC-DC&DC-ACConvertersforTelecom,IndustrialandConsumerEnvironment Features ?5.5A,400V,RDS(on)

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

華汕電子器件汕頭華汕電子器件有限公司

HFP730

400VN-ChannelMOSFET

FEATURES ?OriginativeNewDesign ?SuperiorAvalancheRuggedTechnology ?RobustGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:18nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):0.8Ω(Typ.)@VGS=10V ?

SEMIHOW

SemiHow Co.,Ltd.

HFP730F

400VN-ChannelMOSFET

Features ?OriginativeNewDesign ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?100AvalancheTested ?RoHSCompliant

SEMIHOW

SemiHow Co.,Ltd.

HFP730S

SuperiorAvalancheRuggedTechnology

FEATURES ?OriginativeNewDesign ?SuperiorAvalancheRuggedTechnology ?RobustGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:17nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):0.75Ω(Typ.)@VGS=10V ?

SEMIHOW

SemiHow Co.,Ltd.

HFP730U

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

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