首頁 >GD25Q16EEIGR>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
GD25Q16EEIGR | 包裝:管件 封裝/外殼:8-XFDFN 裸露焊盤 類別:集成電路(IC) 存儲器 描述:16MBIT NOR FLASH /3.3V /WSON 3*2 | GigaDeviceGigaDevice Semiconductor (Beijing) Inc. 兆易創(chuàng)新北京兆易創(chuàng)新科技股份有限公司 | GigaDevice | |
3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA |
產(chǎn)品屬性
- 產(chǎn)品編號:
GD25Q16EEIGR
- 制造商:
GigaDevice Semiconductor (HK) Limited
- 類別:
集成電路(IC) > 存儲器
- 包裝:
管件
- 存儲器類型:
非易失
- 存儲器格式:
閃存
- 技術(shù):
FLASH - NOR
- 存儲容量:
16Mb(2M x 8)
- 存儲器接口:
SPI - 四 I/O
- 寫周期時間 - 字,頁:
70μs,2ms
- 電壓 - 供電:
2.7V ~ 3.6V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
8-XFDFN 裸露焊盤
- 供應(yīng)商器件封裝:
8-USON(2x3)
- 描述:
16MBIT NOR FLASH /3.3V /WSON 3*2
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
GIGADEVICE |
22+ |
N/A |
1647 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
GD/兆易創(chuàng)新 |
23+ |
USON8 |
15000 |
正規(guī)渠道,只有原裝! |
詢價 | ||
GIGADEVICE |
22+ |
SMD |
518000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
GD/兆易創(chuàng)新 |
最新 |
USON8 |
6800 |
全新原裝公司現(xiàn)貨低價 |
詢價 | ||
GigaDevice Semiconductor (HK) |
21+ |
NA |
11200 |
正品專賣,進(jìn)口原裝深圳現(xiàn)貨 |
詢價 | ||
GigaDevice |
21+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價 | |||
GD(兆易創(chuàng)新) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進(jìn)口正品做服務(wù)做口碑有支持 |
詢價 | ||
GD/兆易創(chuàng)新 |
2121+ |
USON8 |
15000 |
只有原裝,支持實單 |
詢價 | ||
GD/兆易創(chuàng)新 |
2121+ |
USON8 |
15000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
GD/兆易創(chuàng)新 |
22+ |
USON8 |
15000 |
原裝正品,渠道現(xiàn)貨 |
詢價 |
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