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GD25Q16EEIGR

包裝:管件 封裝/外殼:8-XFDFN 裸露焊盤 類別:集成電路(IC) 存儲器 描述:16MBIT NOR FLASH /3.3V /WSON 3*2

GigaDeviceGigaDevice Semiconductor (Beijing) Inc.

兆易創(chuàng)新北京兆易創(chuàng)新科技股份有限公司

HM25Q16A

3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM25Q16B

3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM25Q16C

3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

P25Q16L

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-NXH-IR

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-NXH-IT

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-NXH-IW

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-NXH-IY

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-NXH-KR

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-NXH-KT

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-NXH-KW

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-NXH-KY

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-SSH-IR

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-SSH-IT

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-SSH-IW

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-SSH-IY

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-SSH-KR

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-SSH-KT

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

P25Q16L-SSH-KW

UltraLowPower,16M-bit

2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半導(dǎo)體(上海)股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    GD25Q16EEIGR

  • 制造商:

    GigaDevice Semiconductor (HK) Limited

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    管件

  • 存儲器類型:

    非易失

  • 存儲器格式:

    閃存

  • 技術(shù):

    FLASH - NOR

  • 存儲容量:

    16Mb(2M x 8)

  • 存儲器接口:

    SPI - 四 I/O

  • 寫周期時間 - 字,頁:

    70μs,2ms

  • 電壓 - 供電:

    2.7V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    8-XFDFN 裸露焊盤

  • 供應(yīng)商器件封裝:

    8-USON(2x3)

  • 描述:

    16MBIT NOR FLASH /3.3V /WSON 3*2

供應(yīng)商型號品牌批號封裝庫存備注價格
GIGADEVICE
22+
N/A
1647
查現(xiàn)貨到京北通宇商城
詢價
GD/兆易創(chuàng)新
23+
USON8
15000
正規(guī)渠道,只有原裝!
詢價
GIGADEVICE
22+
SMD
518000
明嘉萊只做原裝正品現(xiàn)貨
詢價
GD/兆易創(chuàng)新
最新
USON8
6800
全新原裝公司現(xiàn)貨低價
詢價
GigaDevice Semiconductor (HK)
21+
NA
11200
正品專賣,進(jìn)口原裝深圳現(xiàn)貨
詢價
GigaDevice
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價
GD(兆易創(chuàng)新)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價
GD/兆易創(chuàng)新
2121+
USON8
15000
只有原裝,支持實單
詢價
GD/兆易創(chuàng)新
2121+
USON8
15000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
GD/兆易創(chuàng)新
22+
USON8
15000
原裝正品,渠道現(xiàn)貨
詢價
更多GD25Q16EEIGR供應(yīng)商 更新時間2024-11-6 15:00:00