首頁 >GAL22V10D-25LS>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
GAL22V10D-25LS | Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | |
GAL22V10D-25LS | GAL 22V10 Device Datasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | |
GAL22V10D-25LS | All Devices Discontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | |
GAL22V10D-25LS | All Devices Discontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor 萊迪思萊迪思半導體公司 | Lattice |
詳細參數
- 型號：
GAL22V10D-25LS
- 功能描述：
SPLD - 簡單可編程邏輯器件 HI PERF E2CMOS PLD
- RoHS：
否
- 制造商：
Texas Instruments
- 邏輯系列：
TICPAL22V10Z
- 大電池數量：
10
- 最大工作頻率：
66 MHz
- 延遲時間：
25 ns
- 工作電源電壓：
4.75 V to 5.25 V
- 電源電流：
100 uA
- 最大工作溫度：
+ 75 C
- 最小工作溫度：
0 C
- 安裝風格：
Through Hole
- 封裝/箱體：
DIP-24
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
LATTIC |
21+ |
SOP |
13251 |
支持實單 申請價更優(yōu) 18922892780 |
詢價 | ||
LATTIC |
10+ |
SOP |
980 |
0 |
詢價 | ||
Lattice |
2015+ |
SMD/DIP |
19889 |
一級代理原裝現貨,特價熱賣! |
詢價 | ||
LATTICE |
2020+ |
SOP-24 |
5000 |
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可 |
詢價 | ||
LATTICE |
24+ |
原廠封裝 |
3528 |
原裝現貨 |
詢價 | ||
LATTICE |
22+ |
SOP |
2000 |
絕對全新原裝現貨 |
詢價 | ||
LATTICE |
23+ |
DIP24 |
8000 |
只做原裝現貨 |
詢價 | ||
LATTICE |
23+ |
DIP24 |
7000 |
詢價 | |||
GAL |
23+ |
DIP |
9250 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
LITT |
21+ |
DIP |
743 |
原裝現貨假一賠十 |
詢價 |
相關規(guī)格書
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