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GAL16V8D-25LJ

HighPerformanceE2CMOSPLD

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJ

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJ

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJ

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features ?HIGHPERFORMANCE

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJ

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJ

AllDevicesDiscontinued

Features ?HIGHPERFORMANCEE2CMOS?TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS? AdvancedCMOSTechnology ?50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJI

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features ?HIGHPERFORMANCE

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJI

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJI

HighPerformanceE2CMOSPLD

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJI

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJI

AllDevicesDiscontinued

Features ?HIGHPERFORMANCEE2CMOS?TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS? AdvancedCMOSTechnology ?50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJN

HighPerformanceE2CMOSPLD

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJN

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJN

AllDevicesDiscontinued

Features ?HIGHPERFORMANCEE2CMOS?TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS? AdvancedCMOSTechnology ?50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJNI

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LJNI

AllDevicesDiscontinued

Features ?HIGHPERFORMANCEE2CMOS?TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS? AdvancedCMOSTechnology ?50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LP

HighPerformanceE2CMOSPLD

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LP

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL16V8D-25LP

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

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更多GAL16V8D-25LD供應(yīng)商 更新時(shí)間2024-12-22 15:00:00