GAL16V8D-15LS中文資料萊迪思數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times (

Features

?HIGH PERFORMANCE E2CMOS?TECHNOLOGY

—3.5 ns Maximum Propagation Delay

—Fmax = 250 MHz

—3.0 ns Maximum from Clock Input to Data Output

—UltraMOS? Advanced CMOS Technology

?50 to 75 REDUCTION IN POWER FROM BIPOLAR

—75mA Typ Icc on Low Power Device

—45mA Typ Icc on Quarter Power Device

?ACTIVE PULL-UPS ON ALL PINS

?E2CELL TECHNOLOGY

—Reconfigurable Logic

—Reprogrammable Cells

—100 Tested/100 Yields

—High Speed Electrical Erasure (<100ms)

—20 Year Data Retention

?EIGHT OUTPUT LOGIC MACROCELLS

—Maximum Flexibility for Complex Logic Designs

—Programmable Output Polarity

—Also Emulates 20-pin PAL? Devices with Full Function/Fuse Map/Parametric Compatibility

?PRELOAD AND POWER-ON RESET OF ALL REGISTERS

—100 Functional Testability

?APPLICATIONS INCLUDE:

—DMA Control

—State Machine Control

—High Speed Graphics Processing

—Standard Logic Speed Upgrade

?ELECTRONIC SIGNATURE FOR IDENTIFICATION