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HCTS574HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo

Intersil

Intersil Corporation

HCTS574K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo

Intersil

Intersil Corporation

HCTS574KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo

Intersil

Intersil Corporation

HCTS574MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HE574

MediumPowerAmplier

BOWEIBOWEI Integrated Circuits CO.,LTD.

博威集成電路河北博威集成電路有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    G574SAF

  • 制造商：

    GMT

  • 制造商全稱：

    Global Mixed-mode Technology Inc

  • 功能描述：

    Dual-Slot PCMCIA/CardBus Power Controller

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
GMT
23+
NA
39960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
MEC
24+
原廠封裝
300
原裝現(xiàn)貨假一罰十
 詢價(jià)
GMT/致新
23+
SOP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
GMT/致新
23+
MSOP-10(FD)
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
GMT/致新
24+
NA/
5553
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
 詢價(jià)
GMT
25+
SOP8
2307
原裝正品,假一罰十!
 詢價(jià)
GMT/致新
24+
SOP8
60000
全新原裝現(xiàn)貨
 詢價(jià)
GMT
1836+
SOP8
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
GMT
24+
SOP8
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
GMT
11+
SOP8
12500
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價(jià)
更多G574SAF供應(yīng)商 更新時(shí)間2025-4-27 9:19:00

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