G4PC30F

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

FastSpeedIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?Gener

G4PC40U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)

Benefits ?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHz

G4PC40W

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits ?Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) ?Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher ?Lowconductionlossesandminimalminority-carrier recombinat

G4PC50F

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features ?Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?Industrystandard

G4PC50FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packa

G4PC50U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?Industrystan

G4PC50UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-pack

G4PC50W

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign

G4PF50W

INSULATED GATE BIPOLAR TRANSISTOR

VCES=900V VCE(on)typ.=2.25V @VGE=15V,IC=28A Benefits ?Lowerswitchinglossesallowmorecost-effectiveoperationandhenceefficientreplacementoflargerdieMOSFETsupto100kHz ?Ofparticularbenefitinsingle-endedconvertersandPowerSupplies150Wandhigher ?

G4PF50WD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

VCES=900V VCE(on)typ.=2.25V @VGE=15V,IC=28A Features ?OptimizedforuseinWeldingandSwitch-ModePowerSupplyapplications ?Industrybenchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconduct

G4PH50UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?IGBTco-packagedwithHEXFREDTMultrafast, ult

G4P106-LF

Compliance with ROHS requirements

G4P106N-LF

Cable interface for isolation and low common mode emissions

G4P109

1000 BASE -T QUAD PORT MAGNETICS MODULES

G4P109A

1000 BASE -T QUAD PORT MAGNETICS MODULES

G4P109-A-LF

Designed for Ethernet 1000 BASE-T, full Quad port applications

G4P109-D

1000 BASE -T QUAD PORT MAGNETICS MODULES

G4P109-E

1000 BASE -T QUAD PORT MAGNETICS MODULES

G4P109-E-LF

Compliant with IEEE 802.3ab standard for 1000 BASE-T

G4P109H-LF

Supports 16 pairs of category 5 UTP cable