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G4BC30UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

G4BC30W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign

IRF

International Rectifier

G4BC30W

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

G4BC30W

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRF

International Rectifier

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff

IRF

International Rectifier

IRG4BC30F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff

IRF

International Rectifier

IRG4BC30F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30F

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30FD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRF

International Rectifier

IRG4BC30FDPBF

FastCoPack1GBT(VCES=600V,VCE(on)typ.=1.59V,VGE=15V,IC=17A)

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythan

IRF

International Rectifier

IRG4BC30FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC30FD-S

INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3. ?IGBTco-packagedwithHyperfastFREDdiodesforultral

IRF

International Rectifier

IRG4BC30FD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter. parameterdistributionandhigherefficiencythan Generation3. ?IGBTco-packagedwithHyperfastFREDdiodesforultra

IRF

International Rectifier

IRG4BC30FD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

IRF

International Rectifier

IRG4BC30FPBF

FastSpeedIGBTINSULATEDGATEBIPOLARTRANSISTOR

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Generatio

IRF

International Rectifier

IRG4BC30FPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30F-STRLP

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
23+
TO-220
19721
專注原裝正品現(xiàn)貨特價(jià)中量大可定
詢價(jià)
IR
23+
TO220
7750
全新原裝優(yōu)勢
詢價(jià)
IR
23+
TO-220
10000
公司只做原裝正品
詢價(jià)
IR
22+
TO-220
6000
十年配單,只做原裝
詢價(jià)
IR
23+
TO220
3000
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
詢價(jià)
IR
TO220
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
IR
23+
TO-TO-220
12300
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
詢價(jià)
IR
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
詢價(jià)
N/A
24+
NA
990000
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
更多G4BC30UD供應(yīng)商 更新時(shí)間2025-1-13 9:57:00