首頁 >G4BC20FD>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A) Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Genera | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A) Features ?Fast:optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistribution andhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recovery | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFRRECOVERYDIODE
| IRF International Rectifier | IRF | ||
OPTIMIZEDFORMEDIUMOPERATING | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A) Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEFastCoPackIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A) Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage ?Lead-Free Benef | IRF International Rectifier | IRF |
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