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G20N60B3

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G20N60B3D

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor

Intersil

Intersil Corporation

HGTG20N60B3D

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG20N60B3D

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

HGTP20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor

Intersil

Intersil Corporation

HGTP20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
哈里斯
06+
TO-247
1500
自己公司全新庫存絕對(duì)有貨
詢價(jià)
H
24+
TO247
3000
詢價(jià)
哈里斯
23+
TO-247
3000
全新原裝
詢價(jià)
HARRIS
23+
TO-3P
5000
原裝正品,假一罰十
詢價(jià)
2017+
TO3P
6528
只做原裝正品假一賠十!
詢價(jià)
FSC
24+
TO247
5000
只做原裝公司現(xiàn)貨
詢價(jià)
FAIRCHILD/仙童
TO-3P
40
現(xiàn)貨庫存
詢價(jià)
23+
TO-3P
65480
詢價(jià)
FAIRCHILD/仙童
2447
TO-3P
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
FAIRCHILD/仙童
23+
TO-247
10000
公司只做原裝正品
詢價(jià)
更多G20N60B3B供應(yīng)商 更新時(shí)間2025-2-22 10:32:00