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G20N120中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

G20N120
廠商型號

G20N120

功能描述

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件大小

97.79 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-3-27 17:39:00

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G20N120規(guī)格書詳情

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs

and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.

Features

?45A, 1200V, TC = 25oC

?1200V Switching SOA Capability

?Typical Fall Time. . . . . . . . . . . . . . . . 300ns at TJ = 150oC

?Short Circuit Rating

?Low Conduction Loss

產(chǎn)品屬性

  • 型號:

    G20N120

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

供應商 型號 品牌 批號 封裝 庫存 備注 價格
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