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G20N120中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

G20N120
廠商型號

G20N120

功能描述

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件大小

121.05 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-3 22:30:00

G20N120規(guī)格書詳情

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Features

? 63A, 1200V, TC= 25oC

? 1200V Switching SOA Capability

? Typical Fall Time . . . . . . . . . . . . . . . . 340ns at TJ= 150oC

? Short Circuit Rating

? Low Conduction Loss

產(chǎn)品屬性

  • 型號:

    G20N120

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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SANYO
2020+
TO-252
80000
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SANYO
21+
TO-252
354
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IR
22+
NA
3600
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23+
NA/
2100
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FAI
2018+
TO252
6528
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IR
24+
TO-247
12300
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VISHAY原裝
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TO-247
24543
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IR
2023+
TO-247
80000
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SANYO
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
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進(jìn)口原裝
23+
TO-252
16390
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