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HVC133

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVC133A

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Anoptimalsolutionforantennaswitchinginmobilephones. ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVD133

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching Features ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVD133

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching Features ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVD133A

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching Features ?Anoptimalsolutionforantennaswitchinginmobilephones. ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVL133A

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Feature ?Anoptimalsolutionforantennaswitchinginmobilephones. ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?ExtremelysmallFlatLeadPackage(EFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVL133A

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVU133

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?UltrasmallResinPackage(URP)issuitableforhighdensitysurfacemountingandhighspeedassembly.

HitachiHitachi Semiconductor

日立日立公司

HVU133

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVU133

SiliconEpitaxialPlanarPinDiode

Features ●Lowcapacitance.(C=1.0pFmax) ●Lowforwardresistance.(rf=0.7Ωmax)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

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SANYO/三洋
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24190
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SANYO
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普通
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6796
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SANYO/三洋
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sanyo
2023+
so8
50000
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SANYO
00+
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47
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SANYO
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SANYO
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三年內(nèi)
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更多FW133供應(yīng)商 更新時(shí)間2025-4-17 16:01:00

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