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FTD100N10A

N-Channel Enhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IXFK100N10

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon

IXYS

IXYS Corporation

IXFK100N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN100N10

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

LMPC100N10

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

MTY100N10E

TMOSPOWERFET100AMPERES100VOLTSRDS(on)=0.011OHM

TMOSE-FET?PowerFieldEffecttransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforh

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTY100N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTY100N10E

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDBA100N10B

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDBA100N10B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDPL100N10B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDPL100N10B

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDPL100N10BG

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTY100N10

PowerMOSFET123A,100VN-ChannelEnhancement-ModeTO264Package

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTY100N10

PowerMOSFET123A,100VN??hannelEnhancement??odeTO264Package

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTY100N10G

PowerMOSFET123A,100VN??hannelEnhancement??odeTO264Package

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PRM100N10E

100VSingleN-ChannelMOSFET

PFC

PFC Device Inc.

RSD100N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

RSD100N10

4VDriveNchMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSD100N10FRA

4VDriveNchMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

供應(yīng)商型號品牌批號封裝庫存備注價格
I
23+
TO-252
10000
公司只做原裝正品
 詢價
IPS
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IPS
2022+
TO-252
5000
原廠代理 終端免費(fèi)提供樣品
 詢價
IPS
2048+
TO-252
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
IPS
TO-252
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價
IPS
12+
SOT-252
2500
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IPS
22+
SOT-252
100000
代理渠道/只做原裝/可含稅
 詢價
IPS
TO-252
6000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
原裝正品
23+
TO-252
60778
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
IPS
23+
NA/
53250
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
更多FTD100N10A供應(yīng)商 更新時間2024-12-26 14:30:00

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