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FSYE23A0D1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSL23A0D1

6A,200V,0.350Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin

Intersil

Intersil Corporation

FSS23A0D1

9A,200V,0.330Ohm,RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

詳細參數(shù)

  • 型號：

    FSYE23A0D1

  • 制造商：

    INTERSIL

  • 制造商全稱：

    Intersil Corporation

  • 功能描述：

    Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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