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FSS230D1中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書

FSS230D1
廠商型號(hào)

FSS230D1
功能描述

8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
文件大小

46.46 Kbytes
頁面數(shù)量

8 頁
生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)
原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載
更新時(shí)間

2025-2-2 12:00:00

FSS230D1規(guī)格書詳情

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

Features

? 8A, 200V, rDS(ON) = 0.440?

? Total Dose

??? - Meets Pre-RAD Specifications to 100K RAD (Si)

? Single Event

??? - Safe Operating Area Curve for Single Event Effects

??? - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias

? Dose Rate

??? - Typically Survives 3E9 RAD (Si)/s at 80 BVDSS

??? - Typically Survives 2E12 if Current Limited to IDM

? Photo Current

??? - 3.0nA Per-RAD(Si)/s Typically

? Neutron

??? - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2

??? - Usable to 1E14 Neutrons/cm2

產(chǎn)品屬性

  • 型號(hào)：

    FSS230D1

  • 制造商：

    INTERSIL

  • 制造商全稱：

    Intersil Corporation

  • 功能描述：

    8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
SANYO三洋
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2020+
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80000
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22+
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23+24
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16790
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