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FSM851S

5-PHASE STEPPING SYSTEMS

SANYOSanyo Semicon Device

三洋三洋電機株式會社

FX851

DC-DCConverterApplications

Features ?CompositetypecomposedofalowON-resistancePchannelMOSFETforultrahigh-speedswitchingandlow-voltagedrivingandafast-recovery,lowforward-voltageSchottkybarrierdiode.Facilitateshigh-densitymounting. ?TheFX851isformedwith2chips,onebeingequivalenttothe2SJ1

SANYOSanyo Semicon Device

三洋三洋電機株式會社

FZT851

NPNSILICONPLANARHIGHCURRENT(HIGHPERFORMANCE)TRANSISTORS

FEATURES *Extremelylowequivalenton-resistance;RCE(sat)44m?at5A *6Ampscontinuouscurrent,upto20Ampspeakcurrent *Verylowsaturationvoltages *ExcellenthFEcharacteristicsspecifiedupto10Amps

Zetex

Zetex Semiconductors

FZT851

NPNSiliconPlanarHighCurrent(HighPerformance)Transistor

■Features ●CollectorCurrentCapabilityIC=6A ●CollectorEmitterVoltageVCEO=60V ●ComplementarytoFZT951

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

FZT851

SOT223NPNSILICONPLANARHIGHCURRENT

Features ?BVCEO>60V ?IC=6AHighContinuousCollectorCurrent ?ICM=20APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FZT851

60VNPNMEDIUMPOWERTRANSISTOR

DIODES

Diodes Incorporated

FZT851QTA

60VNPNMEDIUMPOWERTRANSISTORINSOT223

Features ?BVCEO>60V ?IC=6AHighContinuousCollectorCurrent ?ICM=20APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FZT851QTA

60VNPNMEDIUMPOWERTRANSISTOR

DIODES

Diodes Incorporated

FZT851TA

60VNPNMEDIUMPOWERTRANSISTOR

DIODES

Diodes Incorporated

FZT851TA

60VNPNMEDIUMPOWERTRANSISTORINSOT223

Features ?BVCEO>60V ?IC=6AHighContinuousCollectorCurrent ?ICM=20APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

GI851

FastSwitchingPlasticRectifier

FEATURES ?Fastswitchingforhighefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapability ?Solderdip275°Cmax.10s,perJESD22-B106 ?ComplianttoRoHSdirective2002/95/ECandin ??accordancetoWEEE2002/96/EC TYPICALAPPLICATIONS ??Forusei

VishayVishay Siliconix

威世科技威世科技半導體

GI851

FASTSWITCHINGPLASTICRECTIFIER

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Highsurgecurrentcapability ?Fastswitchingforhighefficiency ?Constructionutilizesvoid-freemoldedplastictechnique ?Highforwardcurrentoperation ?Hightemperaturesolderingguaranteed:2

GE

GE Industrial Company

GI851

FastSwitchingPlasticRectifier

FEATURES ?Fastswitchingforhighefficiency ?Lowforwardvoltagedrop ?Lowleakagecurrent ?Highforwardsurgecapability ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS

VishayVishay Siliconix

威世科技威世科技半導體

INA851

INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithOptionalAttenuatingGain

TITexas Instruments

德州儀器美國德州儀器公司

INA851

INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithAttenuatingGainandOutputClamping

1Features ?Gainprogrammablefrom G=0.2to10,000byusingexternalresistor ?Fullydifferentialoutputswithintegratedclamping ?Lowoffsetvoltage:10μV(typ),35μV(max) ?Lowoffsetdrift:0.1μV/°C(typ),0.3μV/°C(max) ?Lowinputbiascurrent:5nA(typ) ?Inputstagenoise

TITexas Instruments

德州儀器美國德州儀器公司

INA851

PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier

1Features ?Eightpin-programmablebinarygains –G(V/V)=?,?,?,1,2,4,8,and16 ?Lowgainerrordrift:2ppm/°C(max) ?Fullydifferentialoutputs –Independentoutputpower-supplypins –Outputcommon-modecontrol ?Fastersignalprocessing: –Widebandwidth:10MHzatallgains

TITexas Instruments

德州儀器美國德州儀器公司

INA851

PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier

1Features ?Eightpin-programmablebinarygains –G(V/V)=?,?,?,1,2,4,8,and16 ?Lowgainerrordrift:1ppm/°C(max)atG=1V/V ?Fullydifferentialoutputs –Independentoutputpower-supplypinstoallow forADCinputoverdriveprotection –Outputcommon-modecontrol ?Faster

TITexas Instruments

德州儀器美國德州儀器公司

INA851

PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier

1Features ?Differentialtosingle-endedconversion ?Eightpin-programmablebinarygains –G(V/V)=?,?,?,1,2,4,8,and16 ?Lowgainerrordrift:2ppm/°C(max) ?Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μs –Settlingtime: 500nsto0.01

TI1Texas Instruments

德州儀器

INA851RGTR

INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithAttenuatingGainandOutputClamping

1Features ?Gainprogrammablefrom G=0.2to10,000byusingexternalresistor ?Fullydifferentialoutputswithintegratedclamping ?Lowoffsetvoltage:10μV(typ),35μV(max) ?Lowoffsetdrift:0.1μV/°C(typ),0.3μV/°C(max) ?Lowinputbiascurrent:5nA(typ) ?Inputstagenoise

TITexas Instruments

德州儀器美國德州儀器公司

INA851RGTT

INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithAttenuatingGainandOutputClamping

1Features ?Gainprogrammablefrom G=0.2to10,000byusingexternalresistor ?Fullydifferentialoutputswithintegratedclamping ?Lowoffsetvoltage:10μV(typ),35μV(max) ?Lowoffsetdrift:0.1μV/°C(typ),0.3μV/°C(max) ?Lowinputbiascurrent:5nA(typ) ?Inputstagenoise

TITexas Instruments

德州儀器美國德州儀器公司

詳細參數(shù)

  • 型號：

    FSM851S

  • 制造商：

    SANYO

  • 制造商全稱：

    Sanyo Semicon Device

  • 功能描述：

    5-PHASE STEPPING SYSTEMS

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AUGAT
新
7223
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TY
23+
65480
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AUGAT
24+
35200
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AUGAT
2023+
SMD
26325
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TE Connectivity
2022+
1
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TE/泰科
2420+
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621282
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24+
47276
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AO
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9461
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TE
20+
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7896
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TE
24+
con
35960
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更多FSM851S供應商 更新時間2025-1-3 16:06:00

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