FSL430R3中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
FSL430R3規(guī)格書詳情
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Features
? 2A, 500V, rDS(ON) = 2.50?
? Total Dose
??? - Meets Pre-RAD Specifications to 100K RAD (Si)
? Single Event
??? - Safe Operating Area Curve for Single Event Effects
??? - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
? Dose Rate
??? - Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
??? - Typically Survives 2E12 if Current Limited to IDM
? Photo Current
??? - 8.0nA Per-RAD(Si)/s Typically
? Neutron
??? - Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2
??? - Usable to 3E13 Neutrons/cm2
產(chǎn)品屬性
- 型號：
FSL430R3
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FANTASY |
23+ |
C0603 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
onsemi(安森美) |
23+ |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | |||
KEYEBCE |
24+ |
DIP |
9 |
詢價 | |||
ON/安森美 |
24+ |
PDIP-7 |
25500 |
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售 |
詢價 | ||
ON/安森美 |
22+ |
PDIP-7 |
18000 |
原裝正品 |
詢價 | ||
ONN |
20+ |
NA |
20000 |
原裝正品,優(yōu)勢訂貨 |
詢價 | ||
IR |
23+ |
97 |
6500 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
24+ |
N/A |
82000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
ON |
24+ |
NA |
3000 |
進口原裝 假一罰十 現(xiàn)貨 |
詢價 | ||
IR |
22+ |
TO262 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 |
