FSJ264R4中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
FSJ264R4規(guī)格書詳情
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Features
? 33A, 250V, rDS(ON) = 0.080?
? Total Dose
??? - Meets Pre-RAD Specifications to 100K RAD (Si)
? Single Event
??? - Safe Operating Area Curve for Single Event Effects
??? - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
? Dose Rate
??? - Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
??? - Typically Survives 2E12 if Current Limited to IDM
? Photo Current
??? - 21nA Per-RAD(Si)/s Typically
? Neutron
??? - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
??? - Usable to 1E14 Neutrons/cm2
產(chǎn)品屬性
- 型號：
FSJ264R4
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TE/泰科 |
2420+ |
/ |
237888 |
一級代理,原裝正品! |
詢價 | ||
AMIS |
22+ |
PLCC-20P |
2000 |
進(jìn)口原裝!現(xiàn)貨庫存 |
詢價 | ||
THOMASBETTS/ANSLEY |
新 |
3455 |
全新原裝 貨期兩周 |
詢價 | |||
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價 | |||
INFINEON |
23+ |
7000 |
詢價 | ||||
TOKO |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
CUI |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費(fèi)送樣 |
詢價 | ||
FSK |
SMD-4 |
35560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
JX/矩形 |
22+ |
SMD |
30000 |
原裝現(xiàn)貨 |
詢價 | ||
Taiyo Yuden |
21+ |
300 |
Taiyo授權(quán)代理,自營現(xiàn)貨 |
詢價 |
