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FSAV430QSC

LowVoltage1.1GHz4Channel2:1VideoSwitch

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FSAV430QSCX

LowVoltage1.1GHz,4-Channel,2:1VideoSwitch

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FSL430D

2A,500V,2.50Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSL430R

2A,500V,2.50Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSS430D

3A,500V,2.70Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS430R

3A,500V,2.70Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSYE430D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopeda seriesofRadiationHardenedMOSFETsspecifically designedforcommercialandmilitaryspaceapplications. EnhancedPowerMOSFETimmunitytoSingleEventEffects (SEE),SingleEventGateRupture(SEGR)inparticular,is combinedwith

Intersil

Intersil Corporation

FSYE430R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopeda seriesofRadiationHardenedMOSFETsspecifically designedforcommercialandmilitaryspaceapplications. EnhancedPowerMOSFETimmunitytoSingleEventEffects (SEE),SingleEventGateRupture(SEGR)inparticular,is combinedwith

Intersil

Intersil Corporation

GFC430

NChannelPowerMOSFETwithlowRDS(on)

GSG

Gunter Seniconductor GmbH.

GME430R

RedPointPro-2.4GHzGyroscopicPresentationMousewithLaserPointer

IOGEAR

iogear

產(chǎn)品屬性

  • 產(chǎn)品編號:

    FR430

  • 制造商:

    TE Connectivity Laird

  • 類別:

    RF/IF,射頻/中頻和 RFID > RF 天線

  • 包裝:

    散裝

  • 頻率組:

    UHF(300MHz ~ 1GHz)

  • 頻率(中心/帶):

    440MHz

  • 頻率范圍:

    430MHz ~ 450MHz

  • 天線類型:

    鞭狀,直形

  • VSWR:

    1.5

  • 增益:

    3dBi

  • 端接:

    N 型母頭

  • 安裝類型:

    支架安裝

  • 高度(最大值):

    34.000"(863.60mm)

  • 描述:

    RF ANT 440MHZ WHIP STR N FEM

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24+
TO252
16800
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LAIRD
20+
射頻元件
55
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FAIRCHILD
23+
SOT-252
101000
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IR
23+
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36000
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24+
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90000
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23+
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69820
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IR
2022+
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12888
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23+
NA
10000
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IR
22+
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8000
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23+
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6000
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更多FR430供應(yīng)商 更新時(shí)間2025-3-26 10:14:00