首頁>FQU13N06L>規(guī)格書詳情

FQU13N06L中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

FQU13N06L
廠商型號

FQU13N06L

功能描述

N-Channel QFET? MOSFET 60 V, 11 A, 115 m廓

文件大小

916.61 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-10-26 10:42:00

FQU13N06L規(guī)格書詳情

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features

? 11 A, 60 V, RDS(on) = 115 m? (Max) @ VGS = 10 V, ID = 5.5 A

? Low Gate Charge (Typ. 4.8 nC)

? Low Crss (Typ. 17 pF)

? 100 Avalanche Tested

? Low Level Gate Drive Requirements Allowing Direct Operation form Logic Drivers

產(chǎn)品屬性

  • 型號:

    FQU13N06L

  • 功能描述:

    MOSFET 60V N-Channel QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
FAIRCHI
21+
TO-251
150
原裝現(xiàn)貨假一賠十
詢價
FAIRCHILD/仙童
24+23+
TO-251
12580
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品
詢價
FAIRCHI
21+
TO-251
12588
原裝正品,自己庫存 假一罰十
詢價
FAIRC
2023+
TO-251(IPAK)
50000
原裝現(xiàn)貨
詢價
FAIRCHI
14+
TO-251
50
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
FAIRCHILD/仙童
2023+
TO-251
2453
十五年行業(yè)誠信經(jīng)營,專注全新正品
詢價
FSC
1844+
TO-251
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
詢價
FSC
24+
TO-251
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
FAIRCHILD/仙童
22+
TO-251
71738
鄭重承諾只做原裝進口現(xiàn)貨
詢價
ON Semiconductor
2010+
N/A
5231
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價