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FQP7N60

600V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP7N60

The Use of QFETs in a Flyback Converter

Introduction Powersupplydesignersfacemanychallengesindesigningmoreefficientandcost-effectivepowersupplies.Efficiencyisamajorconsiderationindesigningswitchingpowersupplies.Manyfactorsinthedesignprocesssuchastheinputfiltercapacitance,transformercoregeometryand

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP7N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQPF7N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF7N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperform

KERSEMI

Kersemi Electronic Co., Ltd.

FQPF7N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQPF7N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FTK7N60DD

7.0Amps,600VoltsN-CHANNELMOSFET

FS

First Silicon Co., Ltd

FTK7N60DD

7.0Amps,600VoltsN-CHANNELMOSFET

FS

First Silicon Co., Ltd

FTK7N60F

7.0Amps,600VoltsN-CHANNELMOSFET

FS

First Silicon Co., Ltd

FTK7N60F

7.0Amps,600VoltsN-CHANNELMOSFET

FS

First Silicon Co., Ltd

FTK7N60P

7.0Amps,600VoltsN-CHANNELMOSFET

FS

First Silicon Co., Ltd

FTK7N60P

7.0Amps,600VoltsN-CHANNELMOSFET

FS

First Silicon Co., Ltd

FTK7N60PD

7.0Amps,600VoltsN-CHANNELMOSFET

FS

First Silicon Co., Ltd

G7N60C

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar

Intersil

Intersil Corporation

G7N60C

14A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe

HARRIS

Harris Corporation

G7N60C

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HFF7N60

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

華汕電子器件汕頭華汕電子器件有限公司

HFH7N60

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

華汕電子器件汕頭華汕電子器件有限公司

HFP7N60

600VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

詳細(xì)參數(shù)

  • 型號(hào)：

    FQP7N60

  • 功能描述：

    MOSFET 600V N-Channel QFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FSC
2020+
TO-220
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢(xún)價(jià)
FAIRCHILD/仙童
24+
TO-220-3
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢(xún)價(jià)
 詢(xún)價(jià)
FAIRCHILD/仙童
21+
6000
原裝正品
 詢(xún)價(jià)
HJ替代
2011+
TO220
50000
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢(xún)價(jià)
FSC
2015+
TO220
19898
專(zhuān)業(yè)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!
 詢(xún)價(jià)
FAIRCHIL
2015+
TO-220
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
 詢(xún)價(jià)
FAIRCHILD
24+
TO-220
8866
詢(xún)價(jià)
FSC
17+
TO-220
6200
100%原裝正品現(xiàn)貨
 詢(xún)價(jià)
FAIRCHILD
05+
原廠(chǎng)原裝
6847
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢(xún)價(jià)
FAIRCHIL
23+
TO-220
8600
全新原裝現(xiàn)貨
 詢(xún)價(jià)
更多FQP7N60供應(yīng)商 更新時(shí)間2024-11-7 22:30:00

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