首頁 >FQI32N20CTU>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
200VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelMOSFET FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.082Ω(Max)@VGS=10V APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
200VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TrenchTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated | IXYS IXYS Corporation | IXYS | ||
TrenchTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
200VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
200VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
TMOSPOWERFET32AMPERES200VOLTSRDS(on)=0.075OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesigna | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOSPOWERFET32AMPERES200VOLTSRDS(on)=0.075OHM | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PowerMOSFET32Amps,200VoltsN-ChannelTO-247 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET32Amps,200VoltsN-ChannelTO-247 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SCHOTTKYDIODEARRAY DEVICEDESCRIPTION TheSDA32SchottkyBarrierDiodeArrayisdesignedtoreducereflectionnoiseonhighspeedparalleldatalines. Thedevicehelpssuppresstransientscausedbytransmissionlinereflections,crosstalkandswitchingnoise. TheSDA32consistsofanarrayof16highspeedSchot | Zetex Zetex Semiconductors | Zetex | ||
200VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半導(dǎo)體有限公司 | MAPLESMI | ||
200VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半導(dǎo)體有限公司 | MAPLESMI |
詳細(xì)參數(shù)
- 型號(hào):
FQI32N20CTU
- 功能描述:
MOSFET 200V N-Channel Adv Q-FET C-Series
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
I2PAK(TO-262) |
7828 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價(jià) | ||
harris |
16+ |
原廠封裝 |
10000 |
全新原裝正品,代理優(yōu)勢(shì)渠道供應(yīng),歡迎來電咨詢 |
詢價(jià) | ||
FSC/ON |
23+ |
原包裝原封 □□ |
1832 |
原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢 庫存 |
詢價(jià) | ||
FAIRCHILD |
24+ |
35200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | |||
FAIRCHILD仙童 |
23+ |
I2PAK |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
Fairchild/ON |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
FAIRCHILD/仙童 |
23+ |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | |||
ON Semiconductor |
2022+ |
TO-262-3,長(zhǎng)引線,I2Pak,TO-26 |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
Fairchild |
23+ |
33500 |
詢價(jià) | ||||
Fairchild/ON |
23+ |
TO2623 Long Leads I2Pak TO262A |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) |
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