首頁 >FQD4N20TM-TP>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelQFET?MOSFET200V,0.85A,1.40廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelEnhancementModePowerMOSFET GENERALFEATURES Vos=200V 'b=1.0A@Ves=10V |Roson)£1.35Q@Ves=10V |SOT-223package. | TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司 | TECHPUBLIC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
200VN-ChannelMOSFET Features ?3.0A,200V,RDS(on)=1.4?(Max.)@VGS=10V ?Lowgatecharge(Typ.5.0nC) ?LowCrss(Typ.5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.2A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
WeathersafeLargeBodiedRotaryIsolatorSwitch–4Pole20A Features&Benefits Suitableforarmouredcable. Solidneutral. On-loadswitchdisconnectors. SwitchcanberemovedfromDINRailassembly allowingforquickandeasyfix. Interlockedfrontcovercanonlyberemovedwhen inOFFposition. Lockableswitchpreventstampering. Toughdurablet | TIMEGUARD timeguard | TIMEGUARD |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
TECH PUBLIC(臺舟) |
23+ |
TO-252-3L |
200 |
三極管/MOS管/晶體管 > 場效應(yīng)管(MOSFET) |
詢價(jià) | ||
FAIRCHIL |
SOT252 |
1000 |
原裝長期供貨! |
詢價(jià) | |||
FAIRCHILD |
24+ |
SOT252 |
119000 |
詢價(jià) | |||
仙童 |
05+ |
TO-252 |
8000 |
原裝進(jìn)口 |
詢價(jià) | ||
FAIRCHIL |
16+ |
TO252 |
93 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
原廠 |
23+ |
TO-252 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
FAIRC |
2020+ |
TO-252 |
27600 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫存 |
詢價(jià) | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
FAIRCHIL |
25+23+ |
SOT252 |
41321 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
FAIRCHILD |
1822+ |
TO-252(D |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) |
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