零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1.8A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1.7A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
400VN-ChannelMOSFET
| FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
400VN-CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
400VN-CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
400VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
TMOSPOWERFET2.0AMPERES400VOLTS | Motorola Motorola, Inc | Motorola | ||
N??hannelDPAKPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET2.0AMPERES400VOLTSRDS(on)=3.5OHM TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme | Motorola Motorola, Inc | Motorola | ||
N-ChannelPowerMOSFETs | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
N-ChannelPowerMOSFETs,2.25A,350-400V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelPowerMOSFETs,2.25A,350-400V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
IRF710-713MTP2N35/2N40N-ChannelPowerMOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N??hannelEnhancement??odeSiliconGate | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET2.0AMPERES400VOLTSRDS(on)=3.5OHM | Motorola Motorola, Inc | Motorola | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI |
詳細(xì)參數(shù)
- 型號(hào):
FQD2N40TF
- 功能描述:
MOSFET 400V N-Channel QFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
FAIRCHIL |
24+ |
TO-252 |
90000 |
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理 |
詢價(jià) | ||
FAIRCHI |
2020+ |
TO-252 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
FAIRCHILD/仙童 |
23+ |
D-PAKTO-252 |
24190 |
原裝正品代理渠道價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
FAIRCHILD/仙童 |
21+ |
D-PAKTO-252 |
30000 |
優(yōu)勢(shì)供應(yīng) 實(shí)單必成 可13點(diǎn)增值稅 |
詢價(jià) | ||
FAIRCHILD |
21+ |
TO-252 |
1835 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
F |
23+ |
DPAK |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
Fairchild/ON |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
FAIRCILD |
22+ |
TO-252 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
FAIRCHILD |
0149+ |
TO-252 |
1426 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
FAIRCHILD/仙童 |
22+ |
D-PAKTO-252 |
18000 |
原裝正品 |
詢價(jià) |
相關(guān)規(guī)格書
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