首頁(yè) >FQB10N20TM>規(guī)格書(shū)列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

FQD10N20

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=0.36?(Max.)@VGS=10V ?LowGateCharge(Typ.13.5nC) ?LowCrss(Typ.13pF)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD10N20

200VLOGICN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD10N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQD10N20C

N-ChannelQFETMOSFET200V,7.8A,360mOhm

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=360m?(Max.)@VGS=10V,ID=3.9A ?LowGateCharge(Typ.20nC) ?LowCrss(Typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD10N20C

N-ChannelQFETMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=360m?(Max.)@VGS=10V,ID=3.9A ?LowGateCharge(Typ.20nC) ?LowCrss(Typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD10N20C

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=360m?(Max.)@VGS=10V,ID=3.9A ?LowGateCharge(Typ.20nC) ?LowCrss(Typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD10N20C

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD10N20C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQD10N20CTM

N-ChannelQFETMOSFET200V,7.8A,360mOhm

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=360m?(Max.)@VGS=10V,ID=3.9A ?LowGateCharge(Typ.20nC) ?LowCrss(Typ

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD10N20CTM

N-channelEnhancementModePowerMOSFET

Features ?VDS=200V,ID=8A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQD10N20L

200VLOGICN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD10N20L

N-ChannelQFETMOSFET200V,7.6A,360m

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD10N20L

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

FQD10N20L

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD10N20L

N-ChannelQFET?MOSFET200V,7.6A,360m廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD10N20LTF

N-ChannelQFETMOSFET200V,7.6A,360m

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD10N20LTM

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

FQD10N20LTM

N-ChannelQFET?MOSFET200V,7.6A,360m廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD10N20LTM

N-channelEnhancementModePowerMOSFET

Features ?VDS=200V,ID=8A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQD10N20TM

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FQB10N20TM

  • 功能描述：

    MOSFET 200V N-Ch QFET Logic Level

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD/仙童
24+
TO-263
10469
只做原廠渠道 可追溯貨源
 詢價(jià)
FSC
1415+
TO-263
28500
全新原裝正品,優(yōu)勢(shì)熱賣
 詢價(jià)
FSC
17+
TO-263
6200
詢價(jià)
FSC
24+
TO-263
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
FSC
22+23+
TO-263
16479
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
FAIRCHI
2020+
SOT-263
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢價(jià)
FAIRCHILD/仙童
23+
TO-263
30000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
 詢價(jià)
FAIRCHILD/仙童
23+
D2-PAKTO-263
24190
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
FAIRCHILD/仙童
21+
TO-263
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
FAIRCHILD/仙童
21+
D2-PAKTO-263
30000
優(yōu)勢(shì)供應(yīng) 實(shí)單必成 可13點(diǎn)增值稅
 詢價(jià)
更多FQB10N20TM供應(yīng)商 更新時(shí)間2024-12-25 16:36:00

相關(guān)規(guī)格書(shū)

更多

相關(guān)庫(kù)存

更多