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FQA28N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?28.4A,500V,RDS(on)=0.16?@VGS=10V ?Lowgatecharge(typical110nC) ?LowCrss(typical60pF) ?Fastswitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA28N50F

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQA28N50F

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXFH28N50

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

IXFH28N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH28N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

IXFH28N50F

HiPerRFPowerMOSFETs

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

IXFH28N50Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedIn

IXYS

IXYS Corporation

IXFH28N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFT28N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    FMH28N50E

  • 制造商:

    Fuji Electric

  • 功能描述:

    IC,MOSFET; N-Channel,FAP-E3 Planar; 500V; 28A; 400W; TO-3P(Q)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FUJI/富士電機(jī)
24+
TO-3P
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢價(jià)
詢價(jià)
FUJI
2019
TO-3P
19700
INFINEON品牌專業(yè)原裝優(yōu)質(zhì)
詢價(jià)
FUJI
19+
TO-3P
71602
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
FujiSemiconductor
5
全新原裝 貨期兩周
詢價(jià)
FUJI
25+23+
TO-3P
24484
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
詢價(jià)
Fuji Semiconductor
2022+
1
全新原裝 貨期兩周
詢價(jià)
FUJITSU/富士通
23+
TO3P
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
FUJI
23+
TO-3PF
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
FUJI/富士電機(jī)
2022+
TO-3P
50000
原廠代理 終端免費(fèi)提供樣品
詢價(jià)
FUJI/富士電機(jī)
21+
TO-3P
5590
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價(jià)
更多FMH28N50E供應(yīng)商 更新時(shí)間2025-6-27 13:36:00