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FM260-MS

SMD Schottky Barrier Rectifier

2.0ASurfaceMountSchottkyBarrierRectifiers-20V-200V Features ?Batchprocessdesign,excellentpowerdissipationoffersbetterreverseleakagecurrentandthermalresistance. ?Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. ?TinyplasticSMDpackage. ?Lowpo

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

FM260-MT

ChipSchottkyBarrierRectifier

2.0ASurfaceMountSchottkyBarrierRectifiers-20V-200V Features ?Batchprocessdesign,excellentpowerdissipationoffersbetterreverseleakagecurrentandthermalresistance. ?Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. ?TinyplasticSMDpackage. ?Lowpo

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

FM260-N

ChipSchottkyBarrierDiodes-Siliconepitaxialplanertype

Siliconepitaxialplanertype Features PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. Forsurfacemountedapplications. ExceedsenvironmentalstandardsofMIL-S-19500/228 Lowleakagecurr

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

FM260-S

2ASMDSCHOTTKYBARRIERRECTIFIERS,20V-200V

FRONTIER

Frontier Electronics

FOD260L

LVTTL/LVCMOS3.3VHighSpeed-10MBit/sLogicGateOptocouplers

SingleChannel:FOD060L,FOD260L DualChannel:FOD063L Description TheseoptocouplersconsistofanAlGaASLED,opticallycoupledtoaveryhighspeedintegratedphoto-detectorlogicgate.Singlechanneldevicesincludeastrobableoutput.Thisoutputfeaturesanopencollector,thereby

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FOD260L

3.3V/5VHighSpeed-10MBit/sLogicGateOptocouplers

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FRE260D

31A,200V,0.080Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FRE260H

31A,200V,0.080Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FRE260R

31A,200V,0.080Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FRK260

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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更多FM260-MS供應(yīng)商 更新時(shí)間2025-3-21 8:30:00

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