首頁 >FLUKE-574-NI>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細(xì)參數(shù)
- 型號：
FLUKE-574-NI
- 功能描述：
環(huán)境檢測設(shè)備 THEMOMETER IR NON- INCENDIVE W/SOFTWARE
- RoHS：
否
- 制造商：
Fluke
- 設(shè)備類型：
Vibration Meter
- 測量儀器：
Vibration
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Fluke |
新 |
5 |
全新原裝 貨期兩周 |
詢價 | |||
Fluke |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
FLUKE |
24+ |
NA |
5000 |
只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718 |
詢價 |
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