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FGD3N60UNDF

Using advanced NPT IGBT technology, Fairchild??? the NPT vIGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential.

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB3N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB3N60

ThisN-channelMOSFETSuseadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications.

KERSEMI

Kersemi Electronic Co., Ltd.

FQB3N60C

600VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB3N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB3N60CTM

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB3N60CTM

600VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD3N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD3N60C

600VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD3N60CTF

600VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號：

    FGD3N60UNDF

  • 功能描述：

    IGBT 晶體管 600V, 3A Short Circuit Rated IGBT

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
TO-252
2669
原廠訂貨渠道,支持BOM配單一站式服務
 詢價
onsemi
24+
TO-252-3,DPak(2 引線 + 接片
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
ONSemiconductor
18+
NA
3597
進口原裝正品優(yōu)勢供應
 詢價
三年內
1983
只做原裝正品
 詢價
FAIRCHILD/仙童
22+
SOT-252
20000
保證原裝正品,假一陪十
 詢價
ON/安森美
2021+
TO-252
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
ON
21+
SOT-252
202
原裝現(xiàn)貨假一賠十
 詢價
ON
1809+
TO-252
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
ON(安森美)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持
 詢價
ON(安森美)
6000
詢價
更多FGD3N60UNDF供應商 更新時間2025-1-22 23:00:00

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