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FDS3601中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

FDS3601
廠商型號

FDS3601

功能描述

100V Dual N-Channel PowerTrench MOSFET

文件大小

89.16 Kbytes

頁面數(shù)量

5

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-26 15:48:00

FDS3601規(guī)格書詳情

General Description

These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

? 1.3 A, 100 V. RDS(ON) = 480 m? @ VGS = 10 V

RDS(ON) = 530 m? @ VGS = 6 V

? Fast switching speed

? Low gate charge (3.7nC typical)

? High performance trench technology for extremely

low RDS(ON)

? High power and current handling capability

產(chǎn)品屬性

  • 型號:

    FDS3601

  • 功能描述:

    MOSFET SO-8

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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9555
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8000
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