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FDR1100F

Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 1.0A

FS

First Silicon Co., Ltd

FH1100

SILICONDIODE

DESCRIPTION: TheASIFH1100isaSiliconDiffusedHotCarrierDiode. FEATURESINCLUDE: ?QS=1.6pCTyp. ?C=1.0pFMax.@f=890MHz ?HermeticGlassPackage

ASI

Advanced Semiconductor

FIDO1100

32-BitReal-TimeCommunicationsController

Innovasic

Innovasic Semiconductor

FJH1100

UltraLowLeakageDiode

GeneralDescription AnUltralowleakagediodeintheDO-35package.Theforwardvoltageistypicallygreaterthan0.5voltsat1.0micro-ampere. Thisproductislightsensitive,anydamagetothebodycoatingwillaffectthereverseleakagewhenexposedtolight.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FJH1100

UltraLowLeakageDiode

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FJT1100

UltraLowLeakageDiodes

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FJT1100

ULTRALOWLEAKAGEDIODES

DIGITRON

Digitron Semiconductors

FLS-1100

LOWPASSFILTER

SYNERGY

Synergy Microwave Corporation

FM1100

Siliconepitaxialplanertype

Siliconepitaxialplanertype Features PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-OUtilizingFlame RetardantEpoxyMoldingCompound. Forsurfacemountedapplications. ExceedsenvironmentalstandardsofMIL-S-19500/228 Lowleakagecurrent.

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

FM1100

ChipSchottkyBarrierDiodes-Siliconepitaxialplanertype

Features PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. Forsurfacemountedapplications. ExceedsenvironmentalstandardsofMIL-S-19500/228 Lowleakagecurrent.

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

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模塊
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RFbay
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3AM
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FIRSTSILICON
23+
SOD-323
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Panasonic
2010+
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66
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更多FDR1100F供應(yīng)商 更新時(shí)間2025-3-22 14:26:00

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