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FDPF10N60NZ

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild??proprietary,planarstripe,DMOStechnology.

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDPF10N60NZ

N-ChannelUniFETTMIIMOSFET600V,10A,750m?

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDPF10N60NZ

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

FDPF10N60ZUT

N-ChannelMOSFET,FRFET600V,9A,0.8廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDPF10N60ZUT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FGP10N60UNDF

600V,10AShortCircuitRatedIGBT

GeneralDescription UsingadvancedNPTIGBTtechnology,Fairchild’stheNPTIGBTsoffertheoptimumperformanceforlow-powerinverterdrivenapplicationswherelow-lossesandshort-circuitruggednessfeaturesareessential,suchassewingmachine,CNC,motorcontrolandhomeappliances. Features

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF10N60UNDF

600V,10AShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FIR10N60AFG

600VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR10N60FG

AdvancedN-ChPowerMOSFET-G

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FM10N60

FM10N6010Amps600VoltageN-ChannelPOWERMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FMC10N60E

N-CHANNELSILICONPOWERMOSFETFeatures

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMC10N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.79Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FMI10N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMP10N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV10N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FQA10N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA10N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.73Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQB10N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI10N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP10N60

600VN-ChannelMOSFET

TGS

Tiger Electronic Co.,Ltd

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON/安森美
2410+
TO-220F
50000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
詢價(jià)
FAIRCHILD仙童
22+23+
TO-220F
25259
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
FAIRCHILD
20+
TO-220F
38900
原裝優(yōu)勢主營型號(hào)-可開原型號(hào)增稅票
詢價(jià)
FAIRCHILD/仙童
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
FAIRCHILD/仙童
2022
TO-220F
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
FAIRCHILD/仙童
2022+
TO-220F
30
原廠代理 終端免費(fèi)提供樣品
詢價(jià)
TH/韓國太虹
2048+
TO-220F
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
FAIRCHILD
TO-220F
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
FSC
11+
TO-220F
24
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
FAIRCHILD/仙童
2022+
TO-220F
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),絕對(duì)原裝 假一罰十
詢價(jià)
更多FDPF10N60C供應(yīng)商 更新時(shí)間2025-1-14 16:12:00