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FDD6N50TM中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

FDD6N50TM
廠商型號(hào)

FDD6N50TM

功能描述

500V N-Channel MOSFET

文件大小

845.65 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-26 10:36:00

FDD6N50TM規(guī)格書詳情

Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Features

? RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A

? Low Gate Charge (Typ. 12.8 nC)

? Low Crss (Typ. 9 pF)

? 100 Avalanche Tested

? Improved dv/dt Capability

Applications

? LCD/LED/PDP TV

? Lighting

? Uninterruptible Power Supply

? AC-DC Power Supply

產(chǎn)品屬性

  • 型號(hào):

    FDD6N50TM

  • 功能描述:

    MOSFET 30V/16V 9.5/12MO NCH SINGLE

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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FAIRCHILD/仙童
2023+
TO-252
18170
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ONSEMI/安森美
23+
DPAK-3TO-252-3
360000
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FAIRCHILD/仙童
23+
SOT-252
35680
只做進(jìn)口原裝QQ:373621633
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Fairchild/ON
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原廠渠道,現(xiàn)貨配單
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Fairchild/ON
21+
TO2523 DPak (2 Leads + Tab) SC
13880
公司只售原裝,支持實(shí)單
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ON/FSC
21+
DPAK/TO252
7055
原裝現(xiàn)貨假一賠十
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FSC
2022+
TO-252
45000
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23+
TO-252
9555
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23+
TO-252
17500
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24+
TO-252
9800
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