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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
FDD6676	文件：85.88 Kbytes Page：6 Pages	30V N-Channel PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed.extremelylowRDS(ON	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6676	文件：331.02 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=78A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FDD6676	文件：1.04327 Mbytes Page：4 Pages	N-channel Advanced Mode Power MOSFET Features ?VDS=40V,ID=150A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FDD6676A	文件：120.31 Kbytes Page：8 Pages	30V N-Channel PowerTrench SyncFET GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6676AS	文件：120.31 Kbytes Page：8 Pages	30V N-Channel PowerTrench SyncFET GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6676AS	文件：930.3 Kbytes Page：4 Pages	N-channel Advanced Mode Power MOSFET Features ?VDS=40V,ID=150A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FDD6676AS_NL	文件：120.31 Kbytes Page：8 Pages	30V N-Channel PowerTrench SyncFET GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6676S	文件：121.33 Kbytes Page：6 Pages	30V N-Channel PowerTrench MOSFET GeneralDescription TheFDS6676SisdesignedtoreplaceaDPAKMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676SincludesanintegratedSchottkydiodeusing	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6676S	文件：331.01 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=78A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FDD6676S	文件：986.8 Kbytes Page：4 Pages	N-channel Advanced Mode Power MOSFET Features ?VDS=40V,ID=150A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FDMA6676PZ	文件：398.03 Kbytes Page：7 Pages	MOSFET??Single,P-Channel,POWERTRENCH	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
FDMC6676BZ	文件：298.735 Kbytes Page：7 Pages		FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 PDF上傳者：深圳德田科技有限公司	Fairchild
FDP6676	文件：82.16 Kbytes Page：5 Pages	30VN-ChannelLogicLevelPowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedfor“l(fā)owside”synchronousrectifieroperation,providinganextremelylowRDS(O	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDP6676	文件：333.16 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=84A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FDP6676S	文件：332.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=76A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FDP6676S	文件：116.99 Kbytes Page：6 Pages	30VN-ChannelPowerTrenchSyncFET? GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP/B6676SincludesanintegratedSchottky	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDS6676	文件：99.8 Kbytes Page：6 Pages	30VN-ChannelPowerTrenchMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDS6676	文件：480.03 Kbytes Page：8 Pages	30VN-ChannelMOSFET Features ?IncludesSyncFETSchottkybodydiode ?Lowgatecharge(45nCtypical) ?Highperformancetrenchtechnologyfor extremelylowRDS(ON)andfastswitching ?Highpowerandcurrenthandlingcapability RoHSCompliant (VGS=10V) VDS(V)=30V ID=13A RDS(ON)	UMWUMW Rightway Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡(jiǎn)稱UMW?)	UMW
FDS6676AS	文件：480.03 Kbytes Page：8 Pages	30VN-ChannelMOSFET Features ?IncludesSyncFETSchottkybodydiode ?Lowgatecharge(45nCtypical) ?Highperformancetrenchtechnologyfor extremelylowRDS(ON)andfastswitching ?Highpowerandcurrenthandlingcapability RoHSCompliant (VGS=10V) VDS(V)=30V ID=13A RDS(ON)	UMWUMW Rightway Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡(jiǎn)稱UMW?)	UMW
FDS6676AS	文件：542.88 Kbytes Page：8 Pages	30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDS6676ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6676ASincludesanintegratedSchottkydiod	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

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詳細(xì)參數(shù)

型號(hào)：
FDD6676
功能描述：
MOSFET 30V N-Ch PowerTrench
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市明嘉萊科技有限公司	FDD6676	FAIRCHILD/仙童	24+	TO252	154495	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市亞泰盈科電子有限公司	FDD6676	FAIRCHILD		SOT252	30216	提供BOM表配單TEL:0755-83759919QQ:2355705587杜S	詢價(jià)
深圳市高捷芯城科技有限公司	FDD6676	onsemi(安森美)	23+	TO-252	7793	支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。	詢價(jià)
深圳市匯萊威科技有限公司	FDD6676	ON/安森美	24+	TO-252	505348	免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價(jià)
深圳市凱斯宇科技有限公司	FDD6676	FAIRCHILD	2022	TO252	2058	原廠原裝正品,價(jià)格超越代理	詢價(jià)
深圳市星佑電子有限公司	FDD6676	仙童	06+	TO-252	12000	原裝庫(kù)存	詢價(jià)
深圳市昌和盛利電子有限公司	FDD6676	FAIRCHILD	23+	TO252	9526		詢價(jià)
深圳市博浩通科技有限公司	FDD6676	FAIRCHILD	23+	SOT252	9365	價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢	詢價(jià)
深圳市卓越微芯電子有限公司	FDD6676	FSC	2020+	TO252	2000	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市力通偉業(yè)半導(dǎo)體有限公司	FDD6676	FAIRCHILD	13+	SOT-252	10000	特價(jià)熱銷現(xiàn)貨庫(kù)存	詢價(jià)

更多FDD6676供應(yīng)商更新時(shí)間2024-10-24 20:35:00

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