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FDD5N50NZTM中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

FDD5N50NZTM
廠商型號(hào)

FDD5N50NZTM

功能描述

N-Channel MOSFET 500V, 4A, 1.5?

文件大小

519.9 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-11-16 13:44:00

FDD5N50NZTM規(guī)格書詳情

Description

UniFET? II MOSFET is Fairchild Semiconductor?’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Features

? RDS(on) = 1.38 ? (Typ.) @ VGS = 10 V, ID = 2 A

? Low Gate Charge (Typ. 9 nC)

? Low Crss (Typ. 4 pF)

? 100 Avalanche Tested

? Improved dv/dt Capability

? ESD Imoroved Capability

? RoHS Compliant

Applications

? LCD/LED/PDP TV

? Lighting

? Uninterruptible Power Supply

產(chǎn)品屬性

  • 型號(hào):

    FDD5N50NZTM

  • 功能描述:

    MOSFET UNIFET2 500V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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