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FDB3632

N-Channel PowerTrench MOSFET 100V, 80A, 9m?

Features ?rDS(ON)=7.5m?(Typ.),VGS=10V,ID=80A ?Qg(tot)=84nC(Typ.),VGS=10V ?LowMillerCharge ?LowQRRBodyDiode ?UISCapability(SinglePulseandRepetitivePulse) ?QualifiedtoAECQ101 Applications ?DC/DCconvertersandOff-LineUPS ?Distribute

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDB3632

N-Channel PowerTrench MOSFET

Features ?rDS(ON)=7.5m?(Typ.),VGS=10V,ID=80A ?Qg(tot)=84nC(Typ.),VGS=10V ?LowMillerCharge ?LowQRRBodyDiode ?UISCapability(SinglePulseandRepetitivePulse) ?QualifiedtoAECQ101 Applications ?DC/DCconvertersandOff-LineUPS ?Distribute

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDB3632

N-Channel PowerTrench MOSFET

Features ●rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A ●Qg(tot)=84nC(Typ.),VGS=10V ●LowMillerCharge ●LowQRRBodyDiode ●UISCapability(SinglePulseandRepetitivePulse)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

FDB3632

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDB3632-F085

N-Channel PowerTrench? MOSFET 100V, 80A, 9mΩ

Features ?rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A ?Qg(tot)=84nC(Typ.),VGS=10V ?LowMillerCharge ?LowQRRBodyDiode ?UISCapability(SinglePulseandRepetitivePulse) ?QualifiedtoAECQ101 ?RoHSCompliant Applications ?DC/DCconvertersandOff-LineUPS ?Distribute

ONSEMION Semiconductor

安森美半導體安森美半導體公司

FDB3632_12

N-Channel PowerTrench? MOSFET 100V, 80A, 9m廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDB3632_F085

N-Channel PowerTrench? MOSFET 100V, 80A, 9m廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDH3632

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDH3632

N-ChannelPowerTrenchMOSFET

Features ?rDS(ON)=7.5m?(Typ.),VGS=10V,ID=80A ?Qg(tot)=84nC(Typ.),VGS=10V ?LowMillerCharge ?LowQRRBodyDiode ?UISCapability(SinglePulseandRepetitivePulse) ?QualifiedtoAECQ101 Applications ?DC/DCconvertersandOff-LineUPS ?Distribute

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDI3632

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDI3632

N-ChannelPowerTrenchMOSFET

Features ?rDS(ON)=7.5m?(Typ.),VGS=10V,ID=80A ?Qg(tot)=84nC(Typ.),VGS=10V ?LowMillerCharge ?LowQRRBodyDiode ?UISCapability(SinglePulseandRepetitivePulse) ?QualifiedtoAECQ101 Applications ?DC/DCconvertersandOff-LineUPS ?Distribute

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDI3632

N-ChannelPowerTrenchMOSFET100V,80A,9m?

Features ?rDS(ON)=7.5m?(Typ.),VGS=10V,ID=80A ?Qg(tot)=84nC(Typ.),VGS=10V ?LowMillerCharge ?LowQRRBodyDiode ?UISCapability(SinglePulseandRepetitivePulse) ?QualifiedtoAECQ101 Applications ?DC/DCconvertersandOff-LineUPS ?Distribute

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP3632

N-ChannelPowerTrenchMOSFET100V,80A,9m?

Features ?rDS(ON)=7.5m?(Typ.),VGS=10V,ID=80A ?Qg(tot)=84nC(Typ.),VGS=10V ?LowMillerCharge ?LowQRRBodyDiode ?UISCapability(SinglePulseandRepetitivePulse) ?QualifiedtoAECQ101 Applications ?DC/DCconvertersandOff-LineUPS ?Distribute

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP3632

N-ChannelPowerTrenchMOSFET

Features ?rDS(ON)=7.5m?(Typ.),VGS=10V,ID=80A ?Qg(tot)=84nC(Typ.),VGS=10V ?LowMillerCharge ?LowQRRBodyDiode ?UISCapability(SinglePulseandRepetitivePulse) ?QualifiedtoAECQ101 Applications ?DC/DCconvertersandOff-LineUPS ?Distribute

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP3632

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

HH-3632

BATTERYHOLDER-2AA

BUD

Bud Industries, Inc.

JHV3632

HIGHVOLTAGERECTIFIERASSEMBLY

MicrosemiMicrosemi Corporation

美高森美美高森美公司

KDB3632

N-ChannelPowerTrenchMOSFET

Features ●rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A ●Qg(tot)=84nC(Typ.),VGS=10V ●LowMillerCharge ●LowQRRBodyDiode ●UISCapability(SinglePulseandRepetitivePulse)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

LM3632A

Single-ChipBacklightWithBiasPowerand1.5-AFlashLEDDriver

TI1Texas Instruments

德州儀器

LM3632AYFFR

Single-ChipBacklightWithBiasPowerand1.5-AFlashLEDDriver

TI1Texas Instruments

德州儀器

詳細參數(shù)

  • 型號:

    FDB3632

  • 功能描述:

    MOSFET N-Channel PowerTrench

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi
24+
D2PAK(TO-263)
30000
晶體管-分立半導體產品-原裝正品
詢價
FSC
15+
原廠原裝
3200
進口原裝現(xiàn)貨假一賠十
詢價
ON/安森美
2020/原裝正品
SMD
800
大量現(xiàn)貨,免費發(fā)樣。
詢價
ON
21+
SOT23
800
詢價
FAIRCHILD/仙童
21+
TO-263
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價
FAIRCHILD
24+
TO263
4000
原裝原廠代理 可免費送樣品
詢價
ON(安森美)
2023+
D2PAK-3
4550
全新原裝正品
詢價
onsemi(安森美)
23+
D2PAK-3
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
Freescale(飛思卡爾)
2306+
5489
只做原裝現(xiàn)貨假一罰十!價格最低!只賣原裝現(xiàn)貨
詢價
ON/安森美
2410+
80000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
詢價
更多FDB3632供應商 更新時間2024-12-23 11:12:00