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FDB2670中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

FDB2670
廠商型號

FDB2670

功能描述

200V N-Channel PowerTrench MOSFET

文件大小

83.65 Kbytes

頁面數(shù)量

5

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-16 17:17:00

FDB2670規(guī)格書詳情

General Description

This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

? 19 A, 200 V. RDS(ON) = 130 m? @ VGS = 10 V

? Low gate charge (27 nC typical)

? Fast switching speed

? High performance trench technology for extremely low RDS(ON)

? High power and current handling capability

產(chǎn)品屬性

  • 型號:

    FDB2670

  • 功能描述:

    MOSFET 200V N-Channel Pwr Trench

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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