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FCPF7N60中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

FCPF7N60
廠商型號(hào)

FCPF7N60

功能描述

600V N-Channel MOSFET

文件大小

802.05 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱(chēng)

Fairchild仙童半導(dǎo)體

中文名稱(chēng)

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-2 23:15:00

FCPF7N60規(guī)格書(shū)詳情

Description

SuperFET? MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Features

? 650 V @ TJ = 150°C

? Typ. RDS(on) = 530 mΩ

? Ultra Low Gate Charge (Typ. Qg = 23 nC)

? Low Effective Output Capacitance (Typ. Coss(eff.) = 60 pF)

? 100 Avalanche Tested

? RoHS Compliant

Application

? LCD/LED/PDP TV

? Solar Inverter

? AC-DC Power Supply

產(chǎn)品屬性

  • 型號(hào):

    FCPF7N60

  • 功能描述:

    MOSFET 600V N-Channel SuperFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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