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FCP9N60N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FCP9N60N

N-Channel MOSFET 600V, 9A, 0.385廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCPF9N60NT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FCPF9N60NT

N-ChannelSupreMOS?MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCPF9N60NT

N-ChannelMOSFET600V,9A,0.385廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFB9N60

PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRFB9N60A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFB9N60A

IRPLLNR5WideRangeInputLinearFluorescentBallast

IRF

International Rectifier

IRFB9N60A

Switchmodepowersupply

VishayVishay Siliconix

威世科技威世科技半導體

IRFB9N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFB9N60A

PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRFB9N60APBF

HEXFETPowerMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowersw

IRF

International Rectifier

IRFS9N60A

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.75?(MAX) ?Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS9N60A

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?Uninterruptib

VishayVishay Siliconix

威世科技威世科技半導體

IRFS9N60A

SMPSMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?HighSpeedPowerSw

IRF

International Rectifier

IRFS9N60A

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導體

IRFS9N60APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFS9N60APBF

SMPSMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?HighSpeedPowerSw

IRF

International Rectifier

IRFS9N60APBF

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?Uninterruptib

VishayVishay Siliconix

威世科技威世科技半導體

IRFS9N60ATRL

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?Uninterruptib

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    FCP9N60N

  • 功能描述：

    MOSFET SupreMOS 9A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi
24+
TO-220-3
30000
晶體管-分立半導體產品-原裝正品
 詢價
FAIRCHILD/仙童
24+
TO-220
216
只做原廠渠道 可追溯貨源
 詢價
onsemi(安森美)
23+
TO-220
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FAIRCHILD/仙童
2410+
TO-220
3200
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價
FSC進口原
17+
TO-220
6200
詢價
Fairchild
23+
TO-220
7750
全新原裝優(yōu)勢
 詢價
FAIRCHILD
24+
原廠原封
6523
進口原裝公司百分百現(xiàn)貨可出樣品
 詢價
Fairchild
1708+
TO-220
7500
只做原裝進口,假一罰十
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
fsc
23+
NA
1186
專做原裝正品,假一罰百!
 詢價
更多FCP9N60N供應商 更新時間2025-1-13 20:17:00

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