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GC11N60F

PowerFactorCorrection

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60F

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60F

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60K

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60K

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60K

PowerFactorCorrection

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60T

PowerFactorCorrection

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60T

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

HFF11N60S

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

華汕電子器件汕頭華汕電子器件有限公司

HMS11N60I

600VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FCP11N60N

  • 功能描述：

    MOSFET SupreMOS 11A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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FAIRCHILD/仙童
24+
TO220
8950
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onsemi
24+
TO-220-3
30000
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onsemi(安森美)
24+
TO-220
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
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Fairchild
23+
TO-220
7750
全新原裝優(yōu)勢(shì)
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FAIRCHI
2020+
TO220
4
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FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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ONSemiconductor
24+
NA
3000
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FAIRCHI
1844+
TO220
6528
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!!
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三年內(nèi)
1983
只做原裝正品
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FSC/ON
23+
原包裝原封 □□
2440
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更多FCP11N60N供應(yīng)商 更新時(shí)間2025-4-27 16:36:00

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