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FBR6035

60 Amp High Voltage SCHOTTKY BARRIER RECTIFIERS Mechanical Dimensions

Features ■HIGHCURRENTCAPABILITY WITHLOWVF ■HIGHEFFICIENCYw/LOWPOWERLOSS ■HIGHSURGEVOLTAGEAND TRANSIENTPROTECTION ■MEETSULSPECIFICATION94V-0

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FDB6035AL

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomp

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDB6035L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD6035

N-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·46A,30VRDS(ON)=

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD6035AL

N-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·46A,30VRDS(ON)=

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD6035AL

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

FDD6035AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=46A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDD6035AL

N-channelEnhancementModePowerMOSFET

Features ?VDS=30V,ID=80A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDP6035AL

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomp

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP6035AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=120V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    FBR6035

  • 制造商：

    FCI

  • 制造商全稱：

    First Components International

  • 功能描述：

    60 Amp High Voltage SCHOTTKY BARRIER RECTIFIERS Mechanical Dimensions

供應商型號品牌批號封裝庫存備注價格
FCI
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
MIC/HG
23+
BR6
120000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FUJITSU
23+
NA
736
專做原裝正品,假一罰百!
 詢價
富士
20+
DIP
30500
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
富士
20+
DIPSOP
2960
誠信交易大量庫存現(xiàn)貨
 詢價
富士通
2023+環(huán)?，F(xiàn)貨
專業(yè)繼電器
6800
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
 詢價
fuj
24+
500000
行業(yè)低價,代理渠道
 詢價
FUJI
新
244
全新原裝 貨期兩周
 詢價
高見澤/TAKAMISAWA
1736+
DIP
8529
專營繼電器只做原裝正品假一賠十!
 詢價
富士通
24+
170
詢價
更多FBR6035供應商 更新時間2025-4-14 15:09:00

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