BD49K55G-TR

Marking：Fa；Package：SSOP3；Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

BD49K55G-TR

Marking：Fa；Package：SSOP3；Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

BD49K55G-TR

Marking：Fa；Package：SSOP3；Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

BFP81

Marking：FA；Package：SOT-143；Silicon NPN Planar RF Transistor

Features ?Smallfeedbackcapacitance ?Lownoisefigure ?Hightransitionfrequency ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ??RFamplifierupto2GHz,especiallyformobiletelephone.

BQ29700DSER

Marking：FA；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features ?Inputvoltagerangepack+:VSS–0.3Vto12V ?FETdrive: –CHGandDSGFETdriveoutput ?VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) ?Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

BQ29700DSET

Marking：FA；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features ?Inputvoltagerangepack+:VSS–0.3Vto12V ?FETdrive: –CHGandDSGFETdriveoutput ?VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) ?Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

IQD009N06NM5SC

Marking：FA；Package：PG-WHSON-8；MOSFET OptiMOS? 5 Power?Transistor, 60 V

Features ?N?channel,normallevel ?Verylowon?resistanceRDS(on) ?Superiorthermalresistance ?Optimizeddesignfordoublesidecooling ?100%avalanchetested ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

NJU77220F3

Marking：FA；Package：SC-88A；Ultra Low Power, Excellent EMI Immunity, Rail-to-Rail Input, CMOS Comparator

FEATURES (V+=3V,Typicalvalue,Ta=25°C) ?UltraLowPower Single0.7μA(allchannel) Dual1.2μA(allchannel) ?IntegratedEMIFilterEMIRR=100dB(f=1.8GHz) ?Rail-to-RailInput -Common-ModeInputVoltageRangeV?toV++0.2V ?DynamicTransientStabilizerTM -Rail-to-RailInput

PDTA123TM

Marking：FA；Package：SC-101；PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *100mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PTVS16VP1BPL

Marking：FA；Package：CFP5-FL；600 W Transient Voltage Suppressor

1.Generaldescription 600Wbi-directionalTransientVoltageSuppressor(TVS)inaCFP5-FL(SOD128FL)smallandflat leadSurface-MountedDevice(SMD)plasticpackage,designedfortransientvoltageprotection. 2.Featuresandbenefits ?Ratedpeakpulsepowerat10/1000μswaveform:PPPM=