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F-369XP

POWERTRANSFORMERPCMountDualPrimary

TRIAD

TRIAD MAGNETICS

H369

NPNSILICONTRANSISTOR

APPLICATIONS GeneralPurposeAmplifierApplication.

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

華汕電子器件汕頭華汕電子器件有限公司

HGN-369

IEC60320INLETSOCKETWITHVOLTAGESELECT,FLANGEMOUNT

POWERDYNAMICS

PowerDynamics, Inc

HMC-ALH369

GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz

GeneralDescription TheHMC-ALH369isaGaAsMMICHEMTthreestage,self-biasedLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides22dBofgain,fromasinglebiassupplyof+5V@66mAwithanoisefigureof2dB.TheHMC-ALH369amplifierdieisidealfori

Hittite

Hittite Microwave Corporation

HMC-ALH369

GaAsHEMTMMICLOWNOISEAMPLIFIER

GeneralDescription TheHMC-ALH369isaGaAsMMICHEMTthreestage,self-biasedLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides22dBofgain,fromasinglebiassupplyof+5V@66mAwithanoisefigureof2dB.TheHMC-ALH369amplifierdieisidealfori

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

HVC369

VariableCapacitanceDiodeforVCO

Features ?LowcapacitanceandtobeusableatGHz. ?Highcapacitanceratio.(n=2.3min) ?Lowseriesresistance.(rs=0.5?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVC369B

VariableCapacitanceDiodeforVCO

FEATURES ?LowcapacitanceandtobeusableatGHz. ?Highcapacitanceratio.(n=2.3min) ?Lowseriesresistance.(rs=0.5?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

HVC369B

VariableCapacitanceDiodeforVCO

Features ?LowcapacitanceandtobeusableatGHz. ?Highcapacitanceratio.(n=2.3min) ?Lowseriesresistance.(rs=0.5?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVC369B

VariableCapacitanceDiodeforVCO

Features ?LowcapacitanceandtobeusableatGHz. ?Highcapacitanceratio.(n=2.3min) ?Lowseriesresistance.(rs=0.5?max) ?UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVD369B

VariableCapacitanceDiodeforVCO

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVD369B

VariableCapacitanceDiodeforVCO

Features ●LowcapacitanceandtobeusableatGHz. ●Highcapacitanceratio.(n=2.3min) ●Lowseriesresistance.(r=0.5Ωmax) ●SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

HVD369B

VariableCapacitanceDiodeforVCO

Features ?LowcapacitanceandtobeusableatGHz. ?Highcapacitanceratio.(n=2.3min) ?Lowseriesresistance.(rs=0.5?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVD369B

VariableCapacitanceDiodeforVCO

Features ?LowcapacitanceandtobeusableatGHz. ?Highcapacitanceratio.(n=2.3min) ?Lowseriesresistance.(rs=0.5?max) ?SupersmallFlatLeadPackage(SFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVD369B

VariableCapacitanceDiodeforVCO

Features ●LowcapacitanceandtobeusableatGHz. ●Highcapacitanceratio.(n=2.3min) ●Lowseriesresistance.(r=0.5Ωmax) ●SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

ZHAOXINGWEI

Zhaoxingwei Electronics ., Ltd

KHP369

Toolsandharnessingmachines

LUMBERGLumberg

隆堡

LM369

PrecisionVoltageReference

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

LM369BH

PrecisionVoltageReference

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

LM369BN

PrecisionVoltageReference

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

LM369CN

PrecisionVoltageReference

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

LM369DM

PrecisionVoltageReference

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

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更多F369S供應(yīng)商 更新時間2024-12-27 16:50:00