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F246R

HCMOS 2.5x2.0mm 2.5V SMD Oscillator

FEATURES ?TightStability ?2.5VOperation ?HCMOSOutput ?StandbyFunction ?TapeandReel(3,000pcs.STD)

FOX

Fox Electronics

FK246

HCMOS2.5V32.768kHzSMDOscillator

FOX

Fox Electronics

FK246R

HCMOS2.5V32.768kHzSMDOscillator

FOX

Fox Electronics

FMA246

HIGH-GAINX-BANDMMIC

FILTRONIC

Filtronic Compound Semiconductors

FMA246

HIGHGAINX-BANDMMICAMPLIFIER

FILTRONIC

Filtronic Compound Semiconductors

GTL-246

LEAKAGECURRENTTESTER

GWINSTEKGood Will Instrument Co., Ltd.

固緯電子固緯電子實(shí)業(yè)股份有限公司

HS-246RH

RadiationHardenedTripleLineTransmitter

Intersil

Intersil Corporation

HS-246RH

RadiationHardenedTripleLine(party-Line)Transmitter

TheHS-245RH/246RH/248RHradiationhardenedtriplelinetransmitterandtriplelinereceiversarefabricatedusingtheIntersildielectricisolationprocess.ThesepartsareidenticalinpinoutandfunctiontotheoriginalHD-245/246/248.Theyarealsodiesizeandbondpadplacementcompatiblewi

Intersil

Intersil Corporation

HS-246RH

RadiationHardenedTripleLineTransmitterandReceivers

Features ?ElectricallyScreenedtoSMD#5962-96722and 5962-96723 ?QMLQualifiedperMIL-PRF-38535Requirements ?RadiationHardenedDIProcessing -TotalDose....................200krad(Si)(Max) -LatchupFree -NeutronFluence..................5

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ID246

FlashMemoryCard

FlashMemoryCard

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

IFC246

Inductivesensor

IFMifm electronic Ltd.

易福門(mén)電子易福門(mén)電子(上海)有限公司 (中國(guó)總部)

IRF246

14Aand13A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF246

NanosecondSwitchingSpeeds

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP246

15Aand14A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRFP246

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IT246

PulseTransformerwithSingleSecondaryWinding

SCHAFFNER

Schaffner International Ltd

JS-246

InteractiveCatalogReplacesCatalogPages

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

JS-246

InteractiveCatalogReplacesCatalogPages

HONEYWELL-ACCHoneywell Accelerometers

霍尼韋爾霍尼韋爾國(guó)際有限公司

JS-246

InteractiveCatalogReplacesCatalogPages

HONEYWELL-ACCHoneywell Accelerometers

霍尼韋爾霍尼韋爾國(guó)際有限公司

JS-246

InteractiveCatalogReplacesCatalogPages

HONEYWELL-ACCHoneywell Accelerometers

霍尼韋爾霍尼韋爾國(guó)際有限公司

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RENESAS
23+
BGA
8659
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2000
240
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22+
VFQFPN
24500
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24+
N/A
47000
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5168
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55
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315000
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2021+
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499
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更多F246R供應(yīng)商 更新時(shí)間2024-11-15 17:00:00