EVAL-ADUM4221EBZ開(kāi)發(fā)板套件編程器的評(píng)估演示板及套件規(guī)格書(shū)PDF中文資料

EVAL-ADUM4221EBZ屬于開(kāi)發(fā)板套件編程器的評(píng)估演示板及套件。由亞德諾半導(dǎo)體技術(shù)有限公司制造生產(chǎn)的EVAL-ADUM4221EBZ評(píng)估和演示板及套件該系列產(chǎn)品提供了一種方便的方法，在經(jīng)過(guò)驗(yàn)證的實(shí)施環(huán)境中評(píng)估某些重點(diǎn)器件的性能或特性。評(píng)估方法通常有完善的文檔說(shuō)明，并且視乎具體情況由評(píng)估軟件提供支持。產(chǎn)品通常由印刷電路板組成，板上已裝有重點(diǎn)器件以及必要或有用的支持元器件，另外也可能包括其他組件，例如電纜或電源。對(duì)于數(shù)量特別多或類別獨(dú)特的器件類別(如 ADC、DAC 和開(kāi)關(guān)模式電源)，評(píng)估平臺(tái)可組合為一個(gè)單獨(dú)的產(chǎn)品系列。

GENERAL DESCRIPTION

The ADuM4221/ADuM4221-1/ADuM4221-2 are 4 A isolated, half bridge gate drivers that employ the Analog Devices, Inc.,

iCoupler? technology to provide independent and isolated

high-side and low-side outputs. The ADuM4221/ADuM4221-1/ ADuM4221-2 provide 5700 V rms isolation in an increased creepage wide body, 16-lead SOIC_IC. Combining high speed

CMOS and monolithic transformer technology, these isolation

components provide outstanding performance characteristics

superior to the alternatives, such as the combination of pulse

transformers and gate drivers. The isolators operate with a logic input voltage ranging from

2.5 V to 6.5 V, providing compatibility with lower voltage

systems. In comparison to gate drivers employing high voltage

level translation methodologies, the ADuM4221/ADuM4221-1/

ADuM4221-2 offer the benefit of true, galvanic isolation

between the input and each output.

The ADuM4221/ADuM4221-1 each have built in overlap

protection and allow dead time adjustment. A single resistor

between the dead time pin (DT) and the GND1 pin sets the

dead time on the secondary side between the high-side and the low-side outputs. The ADuM4221-2 does not have overlap

protection nor dead time control.

An internal thermal shutdown (TSD) sets outputs low if

the internal temperature on the ADuM4221/ADuM4221-1/

ADuM4221-2 exceeds the TSD temperature. As a result,

the ADuM4221/ADuM4221-1/ADuM4221-2 provide reliable control over the switching characteristics of the insulated gate

bipolar transistor (IGBT)/metal-oxide semiconductor field

effect transistor (MOSFET) configurations over a wide range

of positive or negative switching voltages.

FEATURES

4 A peak current (<2 Ω RDSON_x)

2.5 V to 6.5 V logic input voltage

4.5 V to 35 V output supply voltage

UVLO VDD1 positive going threshold: 2.5 V maximum Multiple UVLO options for VDDA and VDDB positive going

threshold

Grade A: 4.5 V maximum Grade B: 7.5 V maximum Grade C: 11.6 V maximum Precise timing characteristics

44 ns maximum propagation delay Adjustable dead time and dual input (ADuM4221) Adjustable dead time and single input (ADuM4221-1) No dead time control and dual input (ADuM4221-2) CMOS input logic levels

High common-mode transient immunity: 150 kV/μs

High junction temperature operation: 125°C Default low output

Safety and regulatory approvals (pending)

UL recognition per UL 1577 5700 V rms for 1 minute duration

CSA Component Acceptance Notice 5A

VDE certificate of conformity

DIN V VDE V 0884-11: VIORM = 849 V peak Increased creepage wide body, 16-lead SOIC_IC

APPLICATIONS

Switching power supplies

Isolated IGBT/MOSFET gate drives

Industrial inverters

Gallium nitride (GaN)/silicon carbide (SiC) compatible