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FDZ299P

P-Channel2.5VSpecifiedPowerTrenchBGAMOSFET

GeneralDescription CombiningFairchild’sadvanced2.5VspecifiedPowerTrenchprocesswithstateoftheartBGApackaging,theFDZ299PminimizesbothPCBspaceandRDS(ON).ThisBGAMOSFETembodiesabreakthroughinpackagingtechnologywhichenablesthedevicetocombineexcellentthermaltransf

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    ERG299

  • 制造商：

    Thomas & Betts

  • 功能描述：

    Installation Tool

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
PAN
23+
10990
詢(xún)價(jià)
MATSUSHITA
2000
1000
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢(xún)價(jià)
24+
N/A
46000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢(xún)價(jià)
更多ERG299供應(yīng)商 更新時(shí)間2025-3-18 15:57:00

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